The SiC Single Crystal Growth from Nanomaterial Precursor
نویسندگان
چکیده
منابع مشابه
SiC Bulk Single Crystal Growth
SiC single crystal is usually grown by sublimation (modified Lely method). There is a lotof remaining issues that should be solved. One is the technical problems of SiC single crystal growth process. And the other is the theoretical problem based on SiC physical properties. As the example of technical issues, in this paper, the example of design optimization for SiC sublimation growth is descri...
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ژورنال
عنوان ژورنال: MRS Advances
سال: 2019
ISSN: 2059-8521
DOI: 10.1557/adv.2019.250